dual n-channel enhancement mode mosfet copyright ? anpec electronics corp. rev. a.5 - feb., 2003 www.anpec.com.tw 1 anpec reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. apm7313 apm7313 handling code temp. range package code package code k : so -8 operating junction temp. range c : -55 to 150c handling code tu : tube tr : tape & reel apm7313 k : apm7313 xxxxx xxxxx - date code pin description ordering and marking information features applications absolute maximum ratings (t a = 25 c unless otherwise noted) ? 30v/6a , r ds(on) =21m ? (typ.) @ v gs =10v r ds(on) =27m ? (typ.) @ v gs =4.5v ? ? ? ? ? super high dense cell design for extremely low r ds(on) ? ? ? ? ? reliable and rugged ? ? ? ? ? so-8 package ? power management in notebook computer , portable equipment and battery powered systems. 1 2 3 45 6 7 8 s1 g1 s2 g2 d2 d2 d1 d1 so-8 top view n-channel mosfet n-channel mosfet symbol parameter rating unit v dss drain-source voltage 30 v gss gate-source voltage 20 v g1 s1 d1 d1 g2 s2 d2 d2 free datasheet http:///
copyright ? anpec electronics corp. rev. a.5 - feb., 2003 www.anpec.com.tw 2 apm7313 apm7313 symbol parameter test condition min. typ. max. unit static bv dss drain-source breakdown voltage v gs =0v , i ds =250 a 30 v i dss zero gate voltage drain current v ds =24v , v gs =0v 1 a v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 11.52 v i gss gate leakage current v gs = 20v , v ds =0v 100 na v gs =10v , i ds =3.5a 21 28 r ds(on) a drain-source on-state resistance v gs =4.5v , i ds =2a 27 42 m ? v sd a diode forward voltage i sd =2a , v gs =0v 0.7 1.3 v dynamic b q g total gate charge 30 36 q gs gate-source charge 5.8 q gd gate-drain charge v ds =15v , i ds = 10a v gs =10v 3.8 nc t d(on) turn-on delay time 11 22 t r turn-on rise time 17 33 t d(off) turn-off delay time 37 68 t f turn-off fall time v dd =15v , i ds =2a , v gen =10v , r g =6 ? 20 38 ns c iss input capacitance 1200 c oss output capacitance 210 c rss reverse transfer capacitance v gs =0v v ds =25v frequency=1.0mhz 95 pf symbol parameter rating unit i d * maximum drain current ? continuous 6 i dm maximum drain current ? pulsed 24 a t a =25 c 2.5 w p d maximum power dissipation t a =100 c 1.0 w t j maximum junction temperature 150 c t stg storage temperature range -55 to 150 c r ja thermal resistance ? junction to ambient 50 c/w * surface mounted on fr4 board, t 10 sec. notes a : pulse test ; pulse width 300 s, duty cycle 2 % b : guaranteed by design, not subject to production testing electrical characteristics (t a = 25 c unless otherwise noted) absolute maximum ratings (cont.) (t a = 25 c unless otherwise noted) free datasheet http:///
copyright ? anpec electronics corp. rev. a.5 - feb., 2003 www.anpec.com.tw 3 apm7313 0 5 10 15 20 25 30 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 01234567 8910 0 5 10 15 20 25 30 typical characteristics 0 10 20 30 40 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 output characteristics v ds -drain-to-source voltage (v) i ds -drain current (a) transfer characteristics v gs -gate-to-source voltage (v) i ds -drain current (a) threshold voltage vs. junction temperature t j -junction temperature ( c) on-resistance vs. drain current i ds -drain current (a) r ds(on) -on-resistance ( ? ) i ds =250 a t j =125 c t j =25 c t j =-55 c v gs =4,4.5,6,8,10v v gs =2.5v v gs =3v v gs =3.5v v gs =4.5v v gs =10v v gs(th) -threshold voltage (v) (normalized) free datasheet http:///
copyright ? anpec electronics corp. rev. a.5 - feb., 2003 www.anpec.com.tw 4 apm7313 typical characteristics (cont.) 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 100 1000 2000 500 0.1 1 10 30 on-resistance vs. gate-to-source voltage on-resistaence vs. junction temperature r ds(on) -on resistance ( ? ) (normalized) r ds (on) - on-resistance ( ? ) gate voltage (v) t j -junction temperature ( c) capacitance characteristics c-capacitance (pf) v gs =10v i ds =3.5a crss coss ciss frequency=1mhz v ds -drain-to-source voltage (v) 345678910 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 i ds =3.5a 0 5 10 15 20 25 30 0 2 4 6 8 10 gate charge v gs -gate-to-source voltage (v) v ds =15v i ds =10a q g -total gate charge (nc) free datasheet http:///
copyright ? anpec electronics corp. rev. a.5 - feb., 2003 www.anpec.com.tw 5 apm7313 0.01 0.1 1 10 0 20 40 60 80 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 typical characteristics (cont.) source-drain diode forward voltage i sd -source current (a) v sd -source to drain voltage time (sec) single pulse power power (w) t j =-55 c t j =25 c t j =125 c 1e-4 1e-3 0.01 0.1 1 10 0.01 0.1 1 square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle , d=t1/t2 2. per unit base=r thja =50 c/w 3. t jm -t a =p dm z thja 4. surface mounted d=0.02 d=0.05 d=0.1 d=0.2 duty cycle=0.5 single normalized transient thermal transient impedence, junction to ambient free datasheet http:///
copyright ? anpec electronics corp. rev. a.5 - feb., 2003 www.anpec.com.tw 6 apm7313 packaging information millimeters inches dim min. max. min. max. a 1.35 1.75 0.053 0.069 a1 0.10 0.25 0.004 0.010 d 4.80 5.00 0.189 0.197 e 3.80 4.00 0.150 0.157 h 5.80 6.20 0.228 0.244 l 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27bsc 0.50bsc 18 8 h e e1 e2 0.015x45 d a a1 0.004max. 1 l sop-8 pin ( reference jedec registration ms-012) free datasheet http:///
copyright ? anpec electronics corp. rev. a.5 - feb., 2003 www.anpec.com.tw 7 apm7313 reference jedec standard j-std-020a april 1999 reflow condition (ir/convection or vpr reflow) physical specifications pre-heat temperature 183 c peak temperature time temperature classification reflow profiles convection or ir/ convection vpr average ramp-up rate(183 c to peak) 3 c/second max. 10 c /second max. preheat temperature 125 25 c) 120 seconds max temperature maintained above 183 c 60 ? 150 seconds time within 5 c of actual peak temperature 10 ?20 seconds 60 seconds peak temperature range 220 +5/-0 c or 235 +5/-0 c 215-219 c or 235 +5/-0 c ramp-down rate 6 c /second max. 10 c /second max. time 25 c to peak temperature 6 minutes max. package reflow conditions pkg. thickness 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume 350 mm3 pkg. thickness < 2.5mm and pkg. volume < 350mm3 convection 220 +5/-0 c convection 235 +5/-0 c vpr 215-219 c vpr 235 +5/-0 c ir/convection 220 +5/-0 c ir/convection 235 +5/-0 c terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb) lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. free datasheet http:///
copyright ? anpec electronics corp. rev. a.5 - feb., 2003 www.anpec.com.tw 8 apm7313 reliability test program test item method description solderability mil-std-883d-2003 245 c , 5 sec holt mil-std-883d-1005.7 1000 hrs bias @ 125 c pct jesd-22-b, a102 168 hrs, 100 % rh , 121 c tst mil-std-883d-1011.9 -65 c ~ 150 c, 200 cycles esd mil-std-883d-3015.7 vhbm > 2kv, vmm > 200v latch-up jesd 78 10ms , i tr > 100ma carrier tape & reel dimensions application a b c j t1 t2 w p e sop-8 330 1 62 1.5 12.75 + 0.1 5 2 + 0.5 12.4 +0.2 2 0.2 12 + 0.3 - 0.1 8 0.1 1.75 0.1 application f d d1 po p1 ao bo ko t sop-8 5.5 0.1 1.55 0.1 1.55+ 0.25 4.0 0.1 2.0 0.1 6.4 0.1 5.2 0.1 2.1 0.1 0.3 0.013 (mm) a j b t2 t1 c t ao e w po p ko bo d1 d f p1 free datasheet http:///
copyright ? anpec electronics corp. rev. a.5 - feb., 2003 www.anpec.com.tw 9 apm7313 customer service anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 cover tape dimensions application carrier width cover tape width devices per reel sop- 8 12 9.3 2500 free datasheet http:///
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